Evaporation donor substrate and method for manufacturing light-emitting device
US8277871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2008 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Jul 27, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24331
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To provide an evaporation donor substrate which is used for deposition by an evaporation method and which allows reduction in manufacturing cost and high uniformity of a film which is deposited. In addition, to provide a method for manufacturing a light-emitting device using the evaporation donor substrate. The evaporation donor substrate includes a reflective layer having an opening which is formed over a substrate, a heat insulating layer having a light-transmitting property which is formed over the substrate and the reflective layer, a light absorption layer which is formed over the heat insulating layer; and a material layer which is formed over the light absorption layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.