Method of fabricating a thin film transistor substrate and a photosensitive composition used in the thin film transistor substrate
US8278021B2 · kind B2 · utility
1Cited by
17References
21Claims
0Family size
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Key dates
| Filing date | Jul 10, 2008 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Jan 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
Disclosed is a method of producing a thin film transistor substrate having high light sensitivity, heat-resistance, impact resistance, and a photosensitive composition used by the same, the method including forming data wires on an insulating substrate, forming an organic insulating film on the data wires by applying a photosensitive composition comprising a terpolymer, where the terpolymer is derived from monomers of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, an unsaturated epoxy group-containing compound, and an olefinic compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.