Semiconductor device, method for producing the same, sensor and electro-optical device
US8278136B2 · kind B2 · utility
36Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Aug 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.