Method for manufacturing semiconductor device
US8278162B2 · kind B2 · utility
56Cited by
24References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2010 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Apr 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/40
Abstract
A formation of a gate electrode provided over an oxide semiconductor layer of a thin film transistor is performed together with a patterning of the oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.