LDD epitaxy for FinFETs

US8278179B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Da-Wen Lin · Baoshan, TW
• Che-Min Chu · Hengshan, TW
• Tsung-Hung Li · Baoshan, TW
• Chih-Hung Tseng · Taichung, TW
• Yen-Chun Lin · Hsinchu, TW
• Chung-Cheng Wu · Baoshan, TW

Key dates

• Filing date: Mar 9, 2010
• Grant date: Oct 2, 2012
• Expiry date: May 26, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A method of forming a semiconductor structure includes providing a substrate including a fin at a surface of the substrate, and forming a fin field-effect transistor (FinFET), which further includes forming a gate stack on the fin; forming a thin spacer on a sidewall of the gate stack; and epitaxially growing a epitaxy region starting from the fin. After the step of epitaxially growing the epitaxy region, a main spacer is formed on an outer edge of the thin spacer. After the step of forming the main spacer, a deep source/drain implantation is performed to form a deep source/drain region for the FinFET.