Compound semiconductor device and manufacturing method thereof
US8278688B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Dec 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A compound semiconductor device includes a carrier transit layer including GaN formed over a substrate; a carrier supply layer including GaN formed over the carrier transit layer; a source electrode and a drain electrode formed over the carrier supply layer; a first compound semiconductor layer including N in which a first opening is formed and that is located between the source electrode and the drain electrode over the carrier supply layer; a gate electrode extending from within the first opening to above the first compound semiconductor layer; and an insulator layer having a second opening that is smaller than the first opening, and insulating the gate electrode and the first compound semiconductor layer within the first opening. The gate electrode extends from within the second opening to above the first compound semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.