Nonvolatile memory device and method of forming the same

US8278698B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Toshiro Nakanishi · Kawasaki, JP
• Chanjin Park · Yongin-si, KR
• Siyoung Choi · Seongnam-si, KR
• Bonyoung Koo · Seoul, KR

Key dates

• Filing date: Feb 9, 2010
• Grant date: Oct 2, 2012
• Expiry date: Nov 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A nonvolatile memory device includes a device isolation pattern, a charge trap layer, and a plurality of word lines. The device isolation pattern defines an active region in a semiconductor substrate and extends in a first direction. The charge trap layer covers the active region and the device isolation pattern. The word lines on the charge trap layer cross the active region and extend in a second direction. The charge trap layer disposed in a first region where the word line and the active region cross each other has a different nitrogen content ratio from the charge trap layer disposed in a second region surrounding the first region.