Power MOSFET integration
US8278712B2 · kind B2 · utility
2Cited by
10References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Sep 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A cellular transistor includes an N-type heavily doped (N+) buried layer (NBL), an N-well connected to the NBL, an N+ layer connected to the N-well and multiple drains. The N-well is formed after formation of the NBL. The N+ layer is formed after formation of the N-well. The multiple drains are connected to the NBL via the N-well and the N+ layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.