Field effect transistor switch for RF signals and method of making the same
US8278720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2010 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Oct 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A switching device has an input node, an output node, and a control node. The device includes: a substrate having a first side and a second side with a ground plane on the first side of the substrate and a mesa on the second side of the substrate. The mesa is made of a normally-conductive semiconductor material, and an isolation region substantially surrounds the mesa. A field effect transistor (FET) is on the mesa. The FET has an input terminal connected to the input node, an output terminal connected to the output node, and a gate. A capacitor is connected in series between the output terminal of the FET and the gate, and a resistor is connected in series between the control node and the gate. A gate electrode is directly connected to the gate. The gate electrode is disposed substantially entirely on the mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.