High voltage resistance coupling structure

US8278730B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Uwe Wahl · Munich, DE
• Markus Hammer · Neu-Ulm, DE
• Jens-Peer Stengl · Hersbruck, DE

Key dates

• Filing date: Oct 28, 2009
• Grant date: Oct 2, 2012
• Expiry date: Dec 7, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/14
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance.