Planarized sacrificial layer for MEMS fabrication
US8278802B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Mar 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a device is provided. The method includes providing a substrate, forming a sacrificial layer over the substrate, and forming an field layer around the sacrificial layer. After formation, both the sacrificial layer and the field layer are planarized. A component is then formed over the planarized sacrificial layer and the planarized field layer. The component has a first electrode and a second electrode and a single crystal wafer disposed between the first electrode and the second electrode. The component also includes anchors disposed substantially over the field layer. Once the component is formed, the sacrificial layer is released with an etchant having a selectivity for the sacrificial layer such that a cavity is formed beneath the component. The cavity allows free movement component within the cavity during operation of the device. In addition, the etchant does not release the field layer and the component such that the field layer remains below the anchors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.