Method and system for measuring laser induced phenomena changes in a semiconductor device
US8278959B2 · kind B2 · utility
3Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Jan 7, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises applying a biasing voltage from an emitter-follower circuit to a device under test (DUT); inducing said changes in the DUT; and measuring a voltage change in a collector portion of the emitter-follower circuit as a measure for said changes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.