Patent · US Active

Bandgap in CMOS DGO process

US8278995B1 · kind B1 · utility

4Cited by
14References
15Claims
0Family size

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Inventors

Key dates

Filing dateJan 12, 2011
Grant dateOct 2, 2012
Priority date—
Expiry dateApr 2, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG05F3/30
  • WIPO fieldControl
  • WIPO sectorInstruments

Abstract

Bandgap voltage reference circuitry capable of operating at very low power supply voltages. The current source for driving the core bandgap voltage reference is implemented with insulated gate field effect transistors having low threshold voltages. Voltage clamp circuitry protects the transistors from power supply voltage variations rising above a predetermined clamp voltage. An output amplifier with output biasing circuitry having a circuit structure similar to that of the core bandgap voltage reference ensures that the bandgap reaches the intended steady state of operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.