CMOS millimeter-wave variable-gain low-noise amplifier
US8279008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2010 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Aug 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/492
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A low-noise amplifier (LNA) includes a first cascode gain stage coupled to an input node for increasing an amplitude of an RF input signal. A first variable gain network is coupled to the first cascode gain stage and includes a first inductor for boosting a gain of the first cascode gain stage, a first capacitor coupled to the first inductor for blocking a direct current (DC) voltage, and a first switch coupled to the first inductor and to the first capacitor. The first switch is configured to selectively couple the first inductor to the first cascode gain stage in response to a first control signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.