Magnetic shift register memory in stack structure
US8279653B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Sep 28, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0841
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic shift register memory in stack structure includes magnetic shift registering layers for forming an unit of stack structure. Each registering layer has multiple magnetic domains and each domain has a magnetization direction corresponding to a stored data. The two adjacent magnetic shift registering layers respectively have an upper magnetic domain and a lower magnetic domain forming a coupling region. By a coupling structure, the lower magnetic domain and the upper magnetic domain have the same stored data. A driving current unit is coupled to the magnetic shift registering layers for respectively providing a driving current in a predetermined direction to the magnetic shift registering layers. As a result, the stored data in the magnetic domains of the magnetic shift registering layers is shifted in a direction from a foremost registering layer to a last registering layer of the magnetic shift registering layers via the coupling structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.