Patent · US Active

Etch apparatus and method of etching silicon nitride

US8282766B2 · kind B2 · utility

4Cited by

7References

11Claims

0Family size

Assignee

austriamicrosystems AG

Inventors

Gerhard Eilmsteiner · Eindhoven, NL
Johann Ninaus · Ansfelden, AT

Key dates

Filing date	Nov 19, 2008
Grant date	Oct 9, 2012
Priority date	—
Expiry date	Dec 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/67086
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.