Method for producing an optoelectronic component and optoelectronic component

US8283191B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Patrick Rode · Regensburg, DE
• Martin Strassburg · Tegernheim, DE
• Karl Engl · Niedergebraching, DE
• Lutz Höppel · Alteglofsheim, DE

Key dates

• Filing date: Jun 9, 2009
• Grant date: Oct 9, 2012
• Expiry date: Jun 9, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.