Patent · US Active

Light emitting diode

US8283682B2 · kind B2 · utility

6Cited by
0References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 19, 2011
Grant dateOct 9, 2012
Priority date
Expiry dateMay 19, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857

Abstract

The present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and are symmetric with respect to those of adjacent another of the light emitting cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.