Patent · US Active

LED semiconductor body and use of an LED semiconductor body

US8283684B2 · kind B2 · utility

2Cited by

3References

27Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Reiner Windisch · Nittendorf, DE
Ralph Wirth · Lappersdorf, DE
Stefan Groetsch · Bad Abbach, DE
Georg Bogner · Lappersdorf, DE
Guenter Kirchberger · Sinzing, DE
Klaus Streubel · Hemau, DE

Key dates

Filing date	Sep 19, 2007
Grant date	Oct 9, 2012
Priority date	—
Expiry date	Feb 25, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/813
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.