Electrostatic discharge protection

US8283698B2 · kind B2 · utility

Assignee

• SOFICS BVBA · BE

Inventors

• Bart Sorgeloos · Gistel, BE
• Benjamin Van Camp · Brugge, BE

Key dates

• Filing date: Apr 15, 2010
• Grant date: Oct 9, 2012
• Expiry date: Apr 12, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/05554

Abstract

An electrostatic discharge (ESD) protection circuit for protecting an integrated circuit (IC) having a first voltage potential, a first power supply potential and a second power supply potential. The ESD circuit includes a first NPN bipolar transistor having a first N-doped junction, a second N-doped junction and a third P-doped base junction. The first N-doped junction is coupled to the first voltage potential and the second N-doped junction is coupled to the first power supply potential. The ESD circuit also includes a first PNP bipolar transistor having a first P-doped junction, a second P-doped junction and a third N-doped base junction. The first P-doped junction is coupled to the first voltage potential and the second P-doped junction is coupled to the second power supply potential. The third P-doped base junction of the first NPN bipolar transistor is coupled to the third N-doped base junction of the first PNP bipolar transistor.