Gas sensor
US8283704B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2009 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Aug 4, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A gas sensor (30) includes two field-effect transistors and gate electrodes on gate insulation films (24) of the two field-effect transistors to detect gas using the gate electrodes. The gas sensor (30) includes a first gate electrode (5), a second gate electrode (6), and voltage applying means. The first gate electrode (5) is provided on one of the field-effect transistors. The second gate electrode (6) is provided on another one of the field-effect transistors. The voltage applying means is for, with the first gate electrode (5) and the second gate electrode (6) coupled to one another by wiring, applying thereto one of a direct-current voltage and an alternating-current voltage having a same potential or a constant voltage difference. The first gate electrode (5) and the second gate electrode (6) are made of different metals. The one field-effect transistor and the other field-effect transistor have approximately the same structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.