Non-volatile memory devices having data storage layer
US8283711B2 · kind B2 · utility
6Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2008 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Dec 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.