High performance flash memory devices

US8283716B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Derek Chen · Irvine, US
• Huilong Zhu · Poughkeepsie, US

Key dates

• Filing date: Jan 18, 2010
• Grant date: Oct 9, 2012
• Expiry date: Aug 13, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A flash memory device includes a wafer; a gate oxide layer disposed upon the wafer; a floating gate disposed upon the gate oxide layer, the wafer, or a combination thereof; the floating gate including a flat floating gate portion and a generally rectangular floating gate portion disposed upon selected areas of the flat floating gate portion; a high K dielectric material disposed upon the floating gate; and a control gate disposed upon the high K dielectric material; wherein the high K dielectric material forms a zigzag pattern coupling the floating gate with the control gate.