Nonvolatile memory device having a fixed charge layer
US8283719B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2010 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Jan 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
Provided are a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a stacked structure, a semiconductor pattern, an information storage layer, and a fixed charge layer. The stacked structure may be disposed over a semiconductor substrate. The stacked structure may include conductive patterns and interlayer dielectric patterns alternately stacked therein. The semiconductor pattern may be connected to the semiconductor substrate by passing through the stacked structure. The information storage layer may be disposed between the semiconductor pattern and the conductive patterns. The fixed charge layer may be disposed between the semiconductor pattern and the interlayer dielectric pattern. The fixed charge layer may include fixed charges. Electrical polarity of the fixed charges may be equal to electrical polarity of majority carriers of the semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.