Patent · US Active

Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property

US8283999B2 · kind B2 · utility

2Cited by

18References

22Claims

0Family size

Assignee

AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. · SG

Inventors

Lueder Elbrecht · Munich, DE
Robert Thalhammer · Iffeldorf, DE

Key dates

Filing date	Feb 23, 2010
Grant date	Oct 9, 2012
Priority date	—
Expiry date	Mar 18, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH03H9/587
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.