Pinned photodiode CMOS image sensor with a low supply voltage
US8284280B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2007 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Jun 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/626
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.