Single-source precursor for semiconductor nanocrystals
US8287951B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2006 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Jun 16, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2991
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for preparing a single source solid precursor matrix for semiconductor nanocrystals having the steps of: mixing 0.1-1 Molar of an aqueous/non-aqueous (organic) solution containing the first component of the host matrix with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state, dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution, addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state, addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material, addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture, and heating the mixture to obtain a solid layered micro-structural precursor compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.