Methods of making heterojunction devices
US8288190B2 · kind B2 · utility
2Cited by
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11Claims
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Inventor
Key dates
| Filing date | Feb 15, 2011 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Feb 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/031
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides methods of making junction devices, such as, fabrication methods. In certain embodiments, the junction device is a graphene/oxide semiconductor Schottky junction device or graphene/oxide semiconductor p-n heterojunction device. In certain instances, the Schottky junction device comprises graphene vapor-deposited directly on thin films, nanowires, nanotubes, nanobelts or nanoparticles, while the p-n heterojunction device is manufactured by doping the graphene of the Schottky junction device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.