Process for fabricating a silicon-based thin-film photovoltaic cell

US8288196B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Cédric Ducros · Bévenais, FR
• Frédéric Sanchette · Montferrat, FR
• Christophe Secouard · Grenoble, FR

Key dates

• Filing date: Apr 20, 2009
• Grant date: Oct 16, 2012
• Expiry date: Apr 20, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A process for fabricating a silicon-based thin-film photovoltaic cell, applicable for example in the energy generation field. The fabrication process includes a) depositing a p-doped or n-doped amorphous silicon film, the X-ray diffraction spectrum of which has a line centered at 28° that has a mid-height width, denoted by a, such that 4.7°≦a<6.0°, on a substrate.