Methods for fabricating components with precise dimension control
US8288204B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2011 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Aug 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating components with precise dimension control are described. One such method includes providing a workpiece including a top layer and a bottom layer of silicon separated by a layer of SiOx, where each of the three layers has about the same length and width, removing edge portions of the top layer, thereby exposing portions of the SiOx layer, etching the exposed portions of the SiOx layer and portions of the SiOx layer disposed between the top layer and bottom layer, thereby forming undercut sections between the top layer and bottom layer, growing a second layer of SiOx having a preselected thickness on the workpiece, depositing metal on the workpiece such that the metal deposited on the top layer is not continuous with the metal deposited on the bottom layer, and removing the bottom layer and a portion of the SiOx layer having a preselected thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.