N-type doping of zinc telluride
US8288255B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 2, 2012 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Feb 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1233
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. This may be preformed using sequential implants, implants of the first species and second species that are at least partially simultaneous, or a molecular species comprising an atom selected from Group III and an atom selected from Group VII. The implants may be performed at an elevated temperature in one instance between 70° C. and 800° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.