Method forming contact plug for semiconductor device using H2 remote plasma treatment
US8288275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2008 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Mar 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of forming a contact plug of a semiconductor device. Methods of forming a contact plug of a semiconductor device may include forming an interlayer insulating layer on a semiconductor substrate on which a lower structure is formed, forming a contact hole in the interlayer insulating layer, the contact hole exposing the lower structure, and forming a W layer and then a WN layer to form a W/WN barrier layer in the contact hole. Methods may include H2 remote plasma treating the W/WN barrier layer, forming a W-plug on the H2 remote plasma treated W/WN barrier layer to fill the contact hole, and chemical mechanical polishing (CMP) the W-plug and then the W/WN barrier layer in order to expose the interlayer insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.