Ion sputter removal from thin microscopy samples with ions extracted from an RF generated plasma
US8288737B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 23, 2008 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Jun 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31745
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma system for changing a microscopy material sample comprises a microscopy material sample holder for holding a microscopy material sample in place in a desired orientation, and a receptacle holder for receiving the sample holder and an RF antenna. The microscopy sample is positioned relative to the antenna so that no point on the antenna is in direct line-of-sight contact with the microscopy sample. This feature of avoiding direct line-of-sight contact between the antenna and the sample assists in preventing, or at least minimizing, ion sputtering of system component material onto the specimen or sample 10 that is being trimmed. Moreover, portions of the system which are in direct line-of-sight contact with the sample are comprised of material having a low sputtering yield, preferably carbon. The material may comprise graphite, and may be in the form of a carbon coating or a carbon paint.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.