Organic field effect transistor and its production method
US8288762B2 · kind B2 · utility
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Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Oct 16, 2012 |
| Priority date | — |
| Expiry date | Mar 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/141
Abstract
An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1):CH2═CHCOO—(CH2)2—CN (1)and/or a monomer represented by the formula (2):CH2═C(CH3)COO—(CH2)2—CN (2)with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.