Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal
US8293011B2 · kind B2 · utility
2Cited by
3References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 19, 2008 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | May 7, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material 13 therein is prepared. Then, material 13 is arranged on one side of heat-shielding portion in chamber. Then, by heating material to be sublimated, a material gas is deposited on the other side of heat-shielding portion in chamber so that a Group III nitride semiconductor crystal is grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.