Semiconductor light-emitting device having stacked transparent electrodes

US8293382B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Chen Ou · Hsinchu, TW
• Chen-ke HSU · Xiamen, CN

Key dates

• Filing date: Mar 31, 2008
• Grant date: Oct 23, 2012
• Expiry date: Jan 13, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/265

Abstract

The luminous element includes a luminescence lamination, a second transparent oxidative conducting layer and a composite conducting layer. The composite conducting layer includes first transparent oxidative conducting layer and a metal layer. The second transparent oxidative conducting layer is positioned between the metal layer and luminescence lamination the second transparent oxidative conducting layer forms good ohmic contact with the luminous element and with metal layer. Thus, the metal layer will not be influenced by interfusion so as to maintain good light transmissivity and raise luminous efficiency of luminous element.