Lithographic mask and method of forming a lithographic mask

US8293431B2 · kind B2 · utility

Assignee

• ADVANCED MASK TECHNOLOGY CENTER GMBH & CO. KG · DE

Inventors

• Haiko Rolff · Dresden, DE
• Carla Byloos · Dresden, DE
• Christoph Noelscher · Nuremberg, DE
• Nicolo Morgana · Dresden, DE
• Roderick Koehle · Ottobrunn, DE
• Molela Moukara · Munich, DE
• Ralf Neubauer · Bammental, DE
• Rainer Pforr · Dresden, DE
• Dominique Savignac · Ismaning, DE

Key dates

• Filing date: Apr 16, 2010
• Grant date: Oct 23, 2012
• Expiry date: Nov 13, 2030

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/32
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.