Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element

US8293553B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Stefan Illek · Donaustauf, DE
• Wilhelm Stein · Dresden, DE
• Robert Walter · Parsberg, DE
• Ralph Wirth · Lappersdorf, DE

Key dates

• Filing date: Apr 25, 2005
• Grant date: Oct 23, 2012
• Expiry date: Jun 7, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/013
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).