Method of manufacturing thin film transistor substrate
US8293564B2 · kind B2 · utility
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4References
11Claims
0Family size
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Key dates
| Filing date | Feb 10, 2011 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Mar 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transistor substrate can be reduced, thereby reducing the manufacturing cost and improving the productivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.