Method for manufacturing a mono-crystalline semiconductor layer on a substrate
US8293627B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2009 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Jan 17, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The described system relates to a method for forming a layer of a mono-crystalline semiconductor material on a substrate, comprising providing a substrate, growing epitaxially a template comprising at least one monolayer of a semiconductor material on the substrate, thereafter depositing an amorphous layer of the semiconductor material on the template; performing a thermal treatment or a laser anneal, thereby converting substantially all of the amorphous layer of the semiconductor material into a mono-crystalline layer of the semiconductor material. According to an embodiment, the semiconductor material is Ge and the substrate is a Si substrate. The template is preferably a few monolayers thick.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.