Graphene memristor having modulated graphene interlayer conduction

US8294132B2 · kind B2 · utility

Assignee

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

• Feng Miao · Mountain View, US
• Joshua Y. Yang · San Francisco, US
• Wei Wu · Palo Alto, US
• Shih-Yuan Wang · Palo Alto, US
• R. Stanley Williams · Portola Valley, US

Key dates

• Filing date: Mar 30, 2010
• Grant date: Oct 23, 2012
• Expiry date: Oct 31, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8845

Abstract

A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.