Semiconductor integrated circuit device and method of fabricating the same
US8294198B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Sep 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device is provided. The semiconductor integrated circuit device includes a plurality of isolation regions which are formed within a semiconductor substrate and define active regions. A tunnel layer and a trap seed layer are formed in each of the active regions and are sequentially stacked between the isolation regions. A trap layer is formed on the trap seed layer and protrudes further than a top surface of each of the isolation regions. A blocking layer is formed on the trap layer. A gate electrode is formed on the blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.