High voltage channel diode
US8294210B2 · kind B2 · utility
2Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Jul 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A channel diode structure having a drift region and method of forming. A charge balanced channel diode structure having an electrode shield and method of forming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.