Method for forming silicide contacts
US8294220B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jan 11, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Jan 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.