High quantum efficiency optical detectors

US8294232B2 · kind B2 · utility

Assignee

• Raytheon Company · US

Inventors

• John L. Vampola · Lompoc, US
• Sean P. Kilcoyne · Lompoc, US
• Robert E. Mills · Goleta, US
• Kenton Veeder · Lompoc, US

Key dates

• Filing date: Nov 3, 2009
• Grant date: Oct 23, 2012
• Expiry date: Dec 17, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

An optical detector includes a detector surface operable to receive light, a depleted field region coupled to the underside of the detector surface, a charge collection node underlying the depleted field region, an active pixel area that includes the portion of the depleted field region above the charge collection node and below the detector surface, and two or more guard regions coupled to the underside of the detector surface and outside of the active pixel area. The depleted field region includes an intrinsic or a near-intrinsic material. The charge collection node has a first width, and the guard regions are separated by a second width that is greater than the first width of the charge collection node. The guard regions are operable to prevent crosstalk to an adjacent optical detector.