Electronic component with p-doped organic semiconductor

US8294359B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Mohamed Ben Khalifa · Lecce, IT
• David Vaufrey · Grenoble, FR

Key dates

• Filing date: Feb 28, 2007
• Grant date: Oct 23, 2012
• Expiry date: Jul 19, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2101/30

Abstract

An electronic component comprising a layer of organic semiconducting material in which a dopant is dispersed having an energy difference between the work function of the dopant and of the HOMO level of said organic semiconducting material that is less than 0.5 eV. The dopant is an atomic element having an evaporation temperature lower than 1300° C. for a pressure of 10−8 Torr. The invention enables the toxicity problems connected with usual organic acceptor dopants to be avoided. It applies in particular to organic light-emitting diodes.