Solid-state imaging device and readout method thereof
US8294800B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2009 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device includes: a plurality of pixels arrayed in the vertical transfer direction and in the horizontal transfer direction; a vertical CCD shift register disposed between two pixels adjacent in the horizontal transfer direction of the plurality of pixels; a first channel stop portion used for separation between pixels, formed between the two pixels adjacent in the horizontal transfer direction, and pixels adjacent to the two pixels adjacent in the horizontal transfer direction, in the horizontal transfer direction; and a readout gate portion and a second channel stop portion, formed in a direction parallel to the vertical transfer direction between the pixels and the vertical CCD shift register, with the two pixels adjacent in the horizontal transfer direction sharing the vertical CCD shift register, and with an insulating layer which is thicker than the gate insulating layer of the vertical CCD shift register being formed above the first channel stop portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.