Semiconductor device
US8295057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2010 |
| Grant date | Oct 23, 2012 |
| Priority date | — |
| Expiry date | Dec 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H7/383
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.