Metal and semimetal sensors near the metal insulator transition regime
US8297837B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 1, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Oct 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/06526
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention generally relates to sensors made of granular thin films in the discontinuous phase. More particularly, the invention relates to microbolometers and displacement sensors fabricated from thin films that are close to the metal insulator transition (MIT) or metal semiconductor transition (MST) regime. Sensors of various designs have been fabricated according to the invention and may be used for deflection measurements, nano-indentation, visco-elastic measurements, topographical scanning, explosive detection, low abundance biomolecular detection, electromagnetic radiation detection and other similar detection and measurement systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.