Method for manufacturing light emitting diode package
US8298841B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 13, 2011 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Dec 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a light emitting diode package, includes: providing a light emitting chip structure comprising a substrate and a light emitting layer; treating the light emitting layer to form at least two spaced light emitting chips on the substrate, the light emitting chips each comprising a first surface away from the substrate and a second surface; forming a first carbon nanotube layer covering the first surfaces of the at least two spaced light emitting chips; removing the substrate; forming a second carbon nanotube layer on the second surfaces of the light emitting chips, thus obtaining a first carbon nanotube layer and a second carbon nanotube layer on opposite sides of the at least two spaced light emitting chips; and packaging the light emitting chip structure to obtain the light emitting diode package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.